Aluminum Nitride Substrate

Aluminum Nitride Substrate

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Features： High thermal conductivity, 7 to 8 times as much as alumina Thermal expansion is close to silicon wafer High insulation resistance High density and high mechanical strength Good chemical durability
Applications： Power modulus, IGBT, MOSFET,.. High power LED package LED chip submount
Characteristics of Material：
Item Material AlN Appearance - Gray Bulk density g /c.c. 3.3 Thermal characteristics Thermal conductivity W/mk 170 Coefficient of linear thermal expansion ×10-6/℃ RT ~ 800℃ 4.4 Electrical characteristics Dielectric strength V/m 14*106 Volume resistivity Ohm．cm >1014 Dielectric constant 1 MHz 8.7 Dielectric loss angle 1 MHz (×10-4) 2.5 Mechanical characteristics Flexure strength Mpa 450 Young’s modulus GPa 320
General Dimensional Specification：
Item Standard Premium Premium Max. 4.5” × 4.5” Max. 4.5” × 4.5” Thickness as-fired 0.4 ~ 1.0 mm Lapped 0.25 ~ 1.0mm Dimensions tolerance ± 1% NLT ± 0.1mm ± 1% NLT ± 0.1mm Thickness tolerance ± 10% ± 0.02mm Warp tolerance ≦ 0.003mm/mm ≦ 0.0015mm/mm Surface roughness 0.3 ~ 0.9μm, as fired < 0.08μm, polished
Characteristics Comparison (AlN/Al2O3) ：
Thermal Characteristics ：
Thermal Conductivity VS. Temperature ：