DIASEMI™ DICU Ultra Thermal™ Series
Diamond / Copper High Thermal Conductivity Composite
Engineered Heat Spreader Platform for Extreme Power Density
1. Product Overview
DIASEMI™ D-Cu Ultra Thermal™ is a next-generation diamond-reinforced copper composite designed for ultra-high heat flux applications.
By integrating engineered carbide interlayers (TiC / WC / ZrC) with optimized diamond architecture, the material achieves exceptional thermal conductivity with tailored thermal expansion, enabling reliable operation in next-generation semiconductor and photonics systems.
2. Key Features
- Ultra-high thermal conductivity: up to 850 W·m⁻¹·K⁻¹
- CTE matching to semiconductors: 6–8 ×10⁻⁶ K⁻¹
- Low interfacial thermal resistance via engineered carbide bonding
- High density (>99%) for maximum heat transport efficiency
- Excellent thermal stability under high power cycling
- Customizable geometry and thickness
3. Typical Applications
Semiconductor & Electronics
- GaN / SiC RF power devices
- Laser diode heat spreaders
- High-performance CPUs / GPUs
- Power modules (IGBT, MOSFET)
Photonics
- High-power laser packaging
- Optical benches
- IR / EUV systems thermal platforms
Advanced Systems
- Aerospace electronics
- Fusion / high-energy systems
- Microwave and RF components
4. Material Specifications
| Property | Typical Value | Test Method |
|---|---|---|
| Thermal Conductivity | 700 – 850 W·m⁻¹·K⁻¹ | Laser Flash |
| Coefficient of Thermal Expansion (CTE) | 6 – 8 ×10⁻⁶ K⁻¹ | Dilatometry |
| Density | > 99% theoretical | Archimedes |
| Specific Heat | ~385 J·kg⁻¹·K⁻¹ | DSC |
| Electrical Resistivity | 2–4 µΩ·cm | Four-point probe |
| Bending Strength | 250–350 MPa | ASTM C1161 |
| Operating Temperature | up to 500°C (air) | — |
5. Interface Engineering Options
(A) WC Interface (Standard Industrial Grade)
- Interlayer: 180–220 nm WC
- Thermal conductivity: 750–820 W·m⁻¹·K⁻¹
- Best for: scalable production, cost-performance balance
(B) TiC Interface (High-End Performance Grade)
- Interlayer: 200–250 nm TiC
- Thermal conductivity: 800–850 W·m⁻¹·K⁻¹
- Best for: extreme heat flux, premium devices
(C) ZrC Interface (High Reliability Grade)
- Interlayer: 150–250 nm ZrC
- Thermal conductivity: 600–750 W·m⁻¹·K⁻¹
- Best for: harsh environments, long lifetime systems
6. Microstructure Design
| Parameter | Specification |
|---|---|
| Diamond Type | Synthetic (HPHT / CVD compatible) |
| Particle Size | 100 – 200 µm (optimized) |
| Volume Fraction | 60 – 70% |
| Distribution | Uniform / bimodal optional |
| Interface Layer | Continuous carbide coating |
7. Available Formats
- Plates: up to 100 × 100 mm
- Thickness: 0.3 – 5 mm
-
Custom shapes:
- Laser cut
- CNC machined
- Metallized (Ni/Au optional)
8. Surface & Finishing Options
- Polished (Ra < 50 nm available)
- Double-side lapping
-
Metallization:
- Ni / Au
- Ti / Pt / Au
- Direct bonding ready surfaces
9. Process Technology
DIASEMI utilizes a hybrid manufacturing platform:
-
Diamond surface metallization
- Magnetron sputtering
- Salt bath / diffusion coating
-
Composite formation:
- Pressure melt infiltration (preferred)
- Vacuum hot pressing
- SPS (R&D / prototyping)
10. Performance Benchmark
| Material | Thermal Conductivity (W·m⁻¹·K⁻¹) | CTE (×10⁻⁶ K⁻¹) |
|---|---|---|
| Copper | ~400 | 17 |
| AlN | 170–200 | 4.5 |
| SiC | 180–270 | 4 |
| CVD Diamond | 1200–2000 | 1–2 |
| DIASEMI D-Cu Ultra Thermal™ | 700–850 | 6–8 |
11. Design Advantages
✔ Compared to Copper
- 2× higher thermal conductivity
- 50% lower CTE
✔ Compared to Ceramics (AlN / SiC)
- 3–4× higher thermal conductivity
- Better heat spreading capability
✔ Compared to CVD Diamond
- Lower cost
- Easier machining
- Better CTE matching
12. Reliability
- Thermal cycling stability: >1000 cycles (−40°C to 200°C)
- No delamination at interface
- مقاومة عالية للتعب الحراري (high thermal fatigue resistance)
13. Design Guidelines
- Optimal interlayer thickness: ~200 nm
- Avoid excessive coating thickness (>300 nm)
- Maintain high diamond volume fraction (~65%)
- Ensure high Cu purity (≥99.99%)
14. Ordering Information
Product Code Format:
DIASEMI-Dcu-[Interface]-[Size]-[Thickness]-[Finish]
Example:
DIASEMI-Dcu-WC-50x50-1.0mm-NiAu
15. Customization Options
- Tailored CTE for specific chips (GaN / Si / SiC)
- Gradient interface design
- Microchannel integration for liquid cooling
- Large-area substrates
16. Summary
DIASEMI™ D-Cu Ultra Thermal™ provides:
The optimal balance between ultra-high thermal conductivity, manufacturability, and system compatibility
It bridges the gap between:
- CVD diamond (performance)
- Copper (cost & processability)
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