semiXicon

Tuesday, June 30, 2026

風姿花伝 (橫山光輝「三國誌」片頭曲)

風姿花伝 (橫山光輝「三國誌」片頭曲) 風姿花傳(ㄔㄨㄢˊ)

作詞：谷村新司作曲：谷村新司唄：谷村新司文言翻譯:sssn1 風は叫ぶ　人の世の哀しみを風號人世之哀星に抱かれた　靜寂の中で於群星簇擁萬籟俱寂中胸を開けば　燃ゆる血潮の赤は若敞心扉則沸血鮮紅共に混ざりて　大いなる流れに將混溶滾滾汩流而往人は夢みる　ゆえに儚く人夢故虛幻無常人は夢みる　ゆえに生きるもの人夢故得以生＊あ～あ～誰も知らない嗚呼無人知曉　あ～あ～明日散る花さえも嗚呼縱是明日凋蔫之花亦然固い契り　爛漫の花の下磐石之契花開爛漫之下月を飲み干す　宴の盃對月一飲而盡酒宴之盅君は帰らず　残されて佇めば君未歸獨駐足徘徊肩にあの日の　誓いの花吹雪憶起誓彼日散落肩上之花如吹雪人は信じて　そして破れて人信而衰頹破敗人は信じて　そして生きるもの人信而得以生 Repeat ＊國は破れて　城も破れて縱使國破城滅草は枯れても　風は鳴き渡る草枯遍野風颯聲依舊あ～あ～誰も知らない嗚呼無人知曉あ～あ～風のその姿を嗚呼風之姿あ～あ～花が伝える嗚呼花之是傳あ～あ～風のその姿を嗚呼風之姿

Thursday, May 28, 2026

AlN-Engineered Diamond/Aluminum Nitride Composite with Multiscale Interface Architecture for Ultra-High Thermal Conductivity and Electrical Insulation

Abstract

The integration of high thermal conductivity and electrical insulation in a single material system remains a critical challenge for advanced thermal management in high-power electronics. Here, we report a hierarchical diamond–AlN composite architecture enabled by multiscale interface engineering and additive manufacturing. Diamond particles are first activated via plasma-induced surface nano-roughening to enhance interfacial bonding. A conformal AlN interlayer is subsequently deposited by plasma-enhanced atomic layer deposition (PE-ALD), followed by the formation of a thick AlN shell via chemical vapor deposition (CVD). The resulting core–shell particles are consolidated with AlN matrix powder using selective laser melting and post-densification via hot isostatic pressing. The engineered interfaces significantly reduce thermal boundary resistance while preserving electrical insulation, yielding bulk composites with thermal conductivity up to 700 W m⁻¹ K⁻¹, high density (>99%), and dielectric breakdown strength up to 14 kV. This work demonstrates a scalable pathway for architected diamond-based composites for extreme thermal management applications.

1. Introduction

The rapid evolution of high-power and high-frequency electronic systems, including GaN-based power devices, radar modules, and laser arrays, has imposed stringent demands on thermal management materials. Conventional polymer-based substrates suffer from low thermal conductivity and limited thermal stability, while metallic composites, despite their excellent heat conduction, fail to meet electrical insulation requirements. Ceramic materials such as aluminum nitride (AlN) provide intrinsic electrical insulation but are limited by moderate thermal conductivity.

Diamond exhibits the highest known thermal conductivity among bulk materials; however, its integration into composite architectures is fundamentally constrained by interfacial thermal resistance and poor wettability with ceramic matrices. Consequently, engineering a thermally efficient and electrically insulating diamond-based composite remains a key materials challenge.

2. Materials Design Concept

We propose a multiscale interface engineering strategy to construct a hierarchical diamond/AlN composite system. The design is based on three synergistic components:

Diamond thermal core
High intrinsic phonon conductivity provides the primary heat transport pathway.
Conformal AlN interfacial layer (nanometer scale)
Deposited via PE-ALD, this layer ensures atomic-scale continuity, enhances phonon coupling, and suppresses interfacial scattering.
AlN outer shell (micrometer scale)
Formed via CVD, this layer provides structural continuity, electrical insulation, and compatibility with powder consolidation processes.

This multiscale architecture transforms discrete diamond particles into thermally integrated building blocks for bulk composites.

3. Surface Activation of Diamond Particles

Diamond powders (20–400 μm) are subjected to plasma-based surface activation using inductively coupled plasma (ICP) or an anode-layer ion source. Reactive oxygen or hydrogen plasma induces controlled surface etching, producing nano-scale roughness (Ra ≈ 5–100 nm). This process simultaneously removes organic contaminants and generates high-density surface anchoring sites.

The increased effective surface area enhances particle–coating adhesion and promotes mechanical interlocking at subsequent interface formation stages. Importantly, controlled roughening improves interfacial phonon coupling by increasing the real contact area between diamond and AlN.

4. Atomic-Scale Interface Engineering via PE-ALD

A conformal AlN interlayer is deposited using plasma-enhanced atomic layer deposition (PE-ALD) with trimethylaluminum (TMA) and NH₃ as precursors. The process yields an ultrathin (10–200 nm) yet dense AlN coating with near-unity conformality.

A graded deposition strategy is employed, wherein precursor-to-reactant ratios are systematically varied to produce a compositional gradient across the interlayer. This gradient reduces lattice and thermal mismatch between diamond and AlN, thereby minimizing interfacial thermal resistance.

The ALD-derived interlayer acts as a phonon coupling mediator, bridging the acoustic impedance mismatch between diamond and ceramic matrix.

5. Formation of Thick AlN Shell via CVD

A secondary AlN layer (>10 μm) is deposited using chemical vapor deposition (PECVD or hot-wire CVD). This layer ensures mechanical robustness and electrical insulation while preserving thermal continuity established by the ALD interface.

The CVD shell transforms individual diamond particles into electrically insulated thermally conductive units suitable for powder-based additive manufacturing.

6. Additive Manufacturing and Densification

Core–shell diamond particles are blended with AlN powder (1–40 μm) and processed via selective laser melting (SLM) under controlled inert atmosphere conditions (O₂ < 0.1%). Layer-wise laser consolidation is followed by:

Vacuum sintering (850–1100 °C)
Optional cold isostatic pressing
Hot isostatic pressing (50–200 MPa, 850–1050 °C)

This multi-step densification sequence ensures near-full density (>99%) while preserving the integrity of thermally engineered interfaces.

7. Thermal Transport Mechanism

The enhanced thermal performance originates from three coupled mechanisms:

Reduced interfacial phonon scattering due to ALD-mediated acoustic bridging
Increased real contact area from plasma-induced surface roughening
Continuous AlN matrix enabling percolative heat conduction pathways

The hierarchical architecture effectively suppresses thermal boundary resistance, which is typically the dominant bottleneck in diamond-based composites.

8. Results and Performance

The resulting bulk composites exhibit:

Thermal conductivity: 600–700 W m⁻¹ K⁻¹
Relative density: ≥99%
Dielectric breakdown strength: ~14 kV
Stable high-temperature thermal transport up to 500 °C

These values represent a significant improvement over conventional AlN or metal-based thermal substrates.

9. Conclusion

We demonstrate a multiscale interface engineering strategy for the fabrication of diamond–AlN composites with exceptional thermal and electrical performance. By integrating plasma-activated surface modification, atomic-scale ALD interface design, and CVD shell formation, we establish a scalable route to overcome long-standing interfacial limitations in diamond-based composites. This work provides a generalizable framework for designing next-generation thermal management materials for extreme electronic environments.

Saturday, May 23, 2026

Low Dielectric Constant Porous Diamond Film SEMIXICON DIASEMI

Low Dielectric Constant Porous Diamond Film

www.diasemi.us

Low dielectric constant porous diamond films are emerging as advanced functional materials for next-generation high-frequency electronics, microwave communication, photonics, and semiconductor packaging. By introducing nanoscale porosity into CVD diamond films, the effective dielectric constant can be significantly reduced while maintaining diamond’s exceptional thermal conductivity, chemical stability, and mechanical hardness.

Compared with dense diamond films, porous diamond structures exhibit lower dielectric constant and dielectric loss, enabling faster signal transmission, reduced RC delay, minimized capacitive coupling, and improved performance in high-speed and high-frequency electronic systems. These characteristics are especially important for 5G/6G communication, millimeter-wave devices, radar systems, microwave integrated circuits, and advanced RF packaging.

Porous diamond films are typically fabricated using MPCVD processes combined with template-assisted growth, selective etching, or nanostructured carbon precursor engineering to control pore size and distribution. The resulting material offers a unique combination of:

Low dielectric constant
Low tangent loss
Faster signal speed
Reduced crosstalk
Low parasitic capacity
Higher frequency
Excellent thermal stability

In advanced semiconductor and photonic applications, low-k porous diamond films provide an ideal platform for thermal management and electromagnetic performance optimization, supporting the development of faster, smaller, and higher-power electronic devices.

Sunday, May 17, 2026

DIASEMI™ TC4 / Diamond Composite

High-Performance Titanium Matrix Composite for Extreme Environments

1. Product Overview

DIASEMI™ TC4/Diamond Composite is an advanced titanium matrix composite engineered by integrating TC4 titanium alloy with high-purity diamond particles. The material is consolidated via spark plasma sintering and can be further functionalized with chemical vapor deposition.

This hybrid architecture delivers a unique combination of:

High strength-to-weight ratio
Exceptional hardness and wear resistance
Tunable thermal expansion
Enhanced thermal management capability

2. Key Features

Diamond Reinforcement
Improves hardness, wear resistance, and thermal conductivity
Engineered Interface (TiC Layer)
In-situ formation of TiC enhances bonding and load transfer
CTE Matching Capability
Adjustable coefficient of thermal expansion for system integration
CVD-Compatible Surface
Direct growth of diamond films for extreme surface performance
Enhanced Densification (Optional Cu Phase)
Improved consolidation without compromising microstructure

3. Typical Properties

4. Microstructure Description

The composite consists of:

TC4 matrix (continuous phase)
Dispersed diamond particles
Interfacial TiC transition layer

Functional Mechanism:

Diamond → load bearing + thermal conduction
TiC → interfacial bonding + stress transfer
TC4 → structural integrity

5. Surface Engineering Option

CVD Diamond Coating Capability

Continuous diamond film achievable after ~4 hours deposition
Strong adhesion via TiC interlayer
Uniform morphology with optimized filament tension

Performance Enhancement:

Ultra-low friction coefficient
Extreme wear resistance
Improved thermal flux handling

6. Manufacturing Process

Step 1 – Powder Preparation

TC4 powder + diamond powder
High-energy ball milling for uniform mixing

Step 2 – Consolidation

Spark plasma sintering (SPS)
Controlled temperature, pressure, and dwell time

Step 3 – Surface Functionalization (Optional)

Hot filament CVD diamond deposition
Stress-controlled filament alignment

7. Design Flexibility

8. Applications

Aerospace

Lightweight wear-resistant components
Thermal-structural parts

Semiconductor Equipment

Precision handling components
Vacuum-compatible structures

Tribology

Bearings and sliding interfaces
High-load wear systems

Biomedical

Biocompatible implants
Surgical tools

9. Competitive Advantages

Integrated bulk + surface engineering
Strong interfacial bonding via TiC
Scalable SPS + CVD manufacturing
Tunable thermal and mechanical properties

10. Customization Options

DIASEMI provides:

Diamond particle size & fraction tuning
Custom geometry (plates, discs, complex shapes)
Surface coating (thickness, roughness, grain size)
Hybrid structures (Cu-enhanced densification)

11. Ordering Information

Code	Description
DIA-TD-10	10% Diamond Composite
DIA-TD-20	20% Diamond Composite
DIA-TD-CVD	With CVD Diamond Coating
DIA-TD-CU	Cu-enhanced densification

12. Quality & Testing

SEM microstructure analysis
Raman spectroscopy (diamond quality)
Density & porosity measurement
Hardness and mechanical testing
Thermal expansion & conductivity characterization

13. Disclaimer

Values shown are typical and may vary depending on processing conditions and customization. DIASEMI recommends application-specific validation.

Thursday, May 14, 2026

Diamond Nanophotonic & Optomechanical Membrane

Enabling Next-Generation Photonics, Quantum Sensing, and Light-Driven Mechanics

Executive Summary

The rapid evolution of nanophotonics and optomechanics is redefining how light interacts with matter—not only as a carrier of information, but also as a mechanical actuator at the micro- and nanoscale. DIASEMI introduces a diamond-based nanophotonic membrane platform that enables simultaneous control of:

Optical phase, polarization, and spin–orbital states
Mechanical motion driven by radiation pressure and angular momentum
Quantum and sensing functionalities enabled by diamond’s unique material properties

Leveraging ultra-thin CVD diamond membranes (1–10 μm) combined with advanced subwavelength structuring and femtosecond laser machining, DIASEMI delivers a scalable solution for integrated photonics, optomechanical systems, and quantum devices.

Technology Overview

Light as a Mechanical and Optical Tool

Photons carry both linear momentum (radiation pressure) and angular momentum (spin and orbital), enabling:

Optical trapping and manipulation (optical tweezers)
Torque generation on birefringent microstructures
Light-driven actuation and switching
Nonlinear optical interactions (e.g., two-photon absorption)

DIASEMI’s platform harnesses these effects through engineered diamond nanostructures, enabling devices that both shape light and respond mechanically.

Form-Birefringent Diamond Nanostructures

Subwavelength grating structures induce form birefringence (Δn = nₑ − nₒ), allowing precise control of:

Polarization states
Spin–orbital coupling (q-plates)
Spectral filtering and dichroism
Phase retardation across wide wavelength ranges

These structures enable advanced optical functionalities across UV → IR → THz regimes, leveraging diamond’s broadband transparency.

Why Diamond? (DIASEMI Advantage)

DIASEMI’s platform is built on high-quality CVD diamond membranes with unmatched properties:

Property	Value / Benefit
Thermal conductivity	Up to 2000 W/m·K
Optical transparency	X-ray to far-IR
Refractive index	~2.4 (ideal for photonics)
Bandgap	5.45 eV (deep UV compatibility)
Mechanical strength	ieal for MEMS/NEMS
Quantum compatibility	NV⁻ centers for sensing

Key Advantage:
Diamond uniquely combines optical, mechanical, and quantum functionalities in a single material platform.

DIASEMI Fabrication Platform

1. Lithography-Based Nanostructuring (High Precision)

Electron-beam lithography (EBL)
Reactive ion etching (RIE)
Subwavelength gratings (Λ: 0.8–7 μm)
Aspect ratios up to ~15

Applications:

Infrared birefringent optics
Polarization control elements
Photonic crystal structures

2. Femtosecond Laser Micro-Machining (High Flexibility)

230 fs pulse duration @ 1030 nm
Sub-micron precision over cm-scale areas
Graphitization-assisted cutting & ablation
Direct structuring of 1 μm membranes

Capabilities:

Suspended optomechanical structures
Stress-relief patterning
Rapid prototyping without masks

Optomechanical Structures

DIASEMI enables fabrication of ultra-sensitive suspended diamond devices, including:

Micro-bridges (≤10 μm width)
Membrane-supported platforms
Resonant mechanical elements

These structures exhibit:

High sensitivity to optical forces
Tunable mechanical resonance
Strong coupling to light fields

Result: Ideal for precision sensing, actuation, and quantum optomechanics.

Optical Performance

Infrared Birefringent Response

Tunable dichroism (positive ↔ negative)
Polarization-dependent absorption and transmission
Quarter-wave phase control via structural design
Broadband operation (2.5–15 μm demonstrated)

Subwavelength Effects

Λ ≈ λ regime enables:
- Enhanced light–matter interaction
- Diffraction-controlled transmission
- Field localization at diamond–air interfaces

Key Innovations

DIASEMI’s platform introduces:

Thin (<10 μm) free-standing diamond photonic membranes
Hybrid fabrication (EBL + fs-laser)
Integrated opto-mechanical functionality
Spectral tunability via geometry-controlled birefringence
Stress-engineered flatness for high-yield fabrication

Applications

Photonics & Optics

IR windows and filters
Polarization converters (q-plates)
Photonic crystal devices
Beam shaping and phase control

Quantum Technologies

NV-based sensing platforms
Quantum photonics integration
Spin–photon interfaces

Optomechanics

Light-driven MEMS/NEMS
Precision force and torque sensors
Levitated particle systems

Thermal & Harsh Environments

High-power laser systems
Aerospace and defense optics
Extreme environment sensing

Manufacturing Challenges Solved by DIASEMI

Challenge	DIASEMI Solution
Membrane warping	Stress-relief laser patterning
Substrate non-flatness	Adaptive fabrication workflows
Fragility of thin diamond	Controlled thinning + support design
Large-area nanopatterning	fs-laser scalability
Multi-physics integration	Unified material platform

Future Roadmap

DIASEMI is advancing toward:

Wafer-scale diamond photonic platforms
Integrated quantum–photonic–mechanical systems
AI-designed nanophotonic structures
Hybrid diamond–Si/SiC/AlN/GaN integration

Conclusion

DIASEMI’s diamond nanophotonic membrane platform represents a paradigm shift in photonics and optomechanics, enabling:

Light to control matter
Structures to control light
And diamond to unify both

This technology unlocks new possibilities in precision sensing, quantum systems, and high-performance photonic devices, positioning DIASEMI at the forefront of next-generation photonics innovation.

Wednesday, May 13, 2026

Standard Diasemi diamond and copper composite heatsink

1. Copper Diamond Composite Cu Coated

Dimensions Tolerances: 15x15x0.3 ±0.1mm

Ra: 0.5um

2. Copper Diamond Composite Cu Coated

Dimensions Tolerances: 15x15x0.5 ±0.1mm

Ra: 0.5um

3. Copper Diamond Composite Cu Coated

Dimensions Tolerances: 15x15x1.0 ±0.1mm

Ra: 0.5um

4. Copper Diamond Composite Cu Coated

Dimensions Tolerances: 15x15x1.5 ±0.1mm

Ra: 0.5um

5. Copper Diamond Composite Cu Coated

Dimensions Tolerances: 15x15x2.0 ±0.1mm

Ra: 0.5um

6. Copper Diamond Composite Cu Coated

Dimensions Tolerances: 20x20x0.3 ±0.1mm

Ra: 0.5um

7. Copper Diamond Composite Cu Coated

Dimensions Tolerances: 20x20x0.5 ±0.1mm

Ra: 0.5um

8. Copper Diamond Composite Cu Coated

Dimensions Tolerances: 20x20x1.0 ±0.1mm

Ra: 0.5um

9. Copper Diamond Composite Cu Coated

Dimensions Tolerances: 20x20x1.5 ±0.1mm

Ra: 0.5um

10. Copper Diamond Composite Cu Coated

Dimensions Tolerances: 20x20x2.0 ±0.1mm

Ra: 0.5um

Tuesday, May 12, 2026

DIASEMI Ultra-Thin AlN Insulated Diamond–Copper Heat Spreader

DIASEMI presents an advanced diamond–copper composite heat spreader featuring an ultra-thin aluminum nitride (AlN) ceramic coating (1–2 μm) for high-performance thermal management with electrical insulation.

Unlike conventional thick ceramic layers, the sub-micron AlN coating is deposited via precision thin-film processes, dramatically reducing thermal resistance while maintaining excellent dielectric strength and interface reliability.

Key Features

Ultra-thin AlN insulation: 1–2 μm (minimized thermal barrier)
Exceptional thermal conductivity: up to 600–900 W/m·K (composite core)
High dielectric strength: suitable for power electronics isolation
Low thermal resistance interface: optimized for high heat flux devices
Robust adhesion: engineered interfacial layer for long-term stability
CTE matching: tailored for GaN, SiC, and advanced semiconductor packages

Performance Advantage

By reducing the ceramic coating thickness from conventional tens of microns to 1–2 μm, DIASEMI achieves:

>30–50% reduction in interfacial thermal resistance
Improved heat dissipation efficiency under >1 kW/cm² heat flux
Enhanced reliability under thermal cycling

Applications

GaN / SiC power modules
High-power laser diode packages
RF and microwave systems
AI and high-density computing hardware

Positioning

The DIASEMI solution bridges the gap between high thermal conductivity materials and electrical insulation, enabling next-generation compact, high-power semiconductor systems where both heat removal and dielectric isolation are critical.