Low Dielectric Constant Porous Diamond Film SEMIXICON DIASEMI

 

Low Dielectric Constant Porous Diamond Film

www.diasemi.us

Low dielectric constant porous diamond films are emerging as advanced functional materials for next-generation high-frequency electronics, microwave communication, photonics, and semiconductor packaging. By introducing nanoscale porosity into CVD diamond films, the effective dielectric constant can be significantly reduced while maintaining diamond’s exceptional thermal conductivity, chemical stability, and mechanical hardness.

Compared with dense diamond films, porous diamond structures exhibit lower dielectric constant and dielectric loss, enabling faster signal transmission, reduced RC delay, minimized capacitive coupling, and improved performance in high-speed and high-frequency electronic systems. These characteristics are especially important for 5G/6G communication, millimeter-wave devices, radar systems, microwave integrated circuits, and advanced RF packaging.

Porous diamond films are typically fabricated using MPCVD processes combined with template-assisted growth, selective etching, or nanostructured carbon precursor engineering to control pore size and distribution. The resulting material offers a unique combination of:

• Low dielectric constant
• Low tangent loss
• Faster signal speed
• Reduced crosstalk
• Low parasitic capacity
• Higher frequency
• Excellent thermal stability

In advanced semiconductor and photonic applications, low-k porous diamond films provide an ideal platform for thermal management and electromagnetic performance optimization, supporting the development of faster, smaller, and higher-power electronic devices.

 

DIASEMI™ TC4 / Diamond Composite

High-Performance Titanium Matrix Composite for Extreme Environments

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1. Product Overview

DIASEMI™ TC4/Diamond Composite is an advanced titanium matrix composite engineered by integrating TC4 titanium alloy with high-purity diamond particles. The material is consolidated via spark plasma sintering and can be further functionalized with chemical vapor deposition.

This hybrid architecture delivers a unique combination of:

• High strength-to-weight ratio
• Exceptional hardness and wear resistance
• Tunable thermal expansion
• Enhanced thermal management capability

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2. Key Features

• Diamond Reinforcement
  Improves hardness, wear resistance, and thermal conductivity
• Engineered Interface (TiC Layer)
  In-situ formation of TiC enhances bonding and load transfer
• CTE Matching Capability
  Adjustable coefficient of thermal expansion for system integration
• CVD-Compatible Surface
  Direct growth of diamond films for extreme surface performance
• Enhanced Densification (Optional Cu Phase)
  Improved consolidation without compromising microstructure

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3. Typical Properties

4. Microstructure Description

The composite consists of:

• TC4 matrix (continuous phase)
• Dispersed diamond particles
• Interfacial TiC transition layer

Functional Mechanism:

• Diamond → load bearing + thermal conduction
• TiC → interfacial bonding + stress transfer
• TC4 → structural integrity

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5. Surface Engineering Option

CVD Diamond Coating Capability

• Continuous diamond film achievable after ~4 hours deposition
• Strong adhesion via TiC interlayer
• Uniform morphology with optimized filament tension

Performance Enhancement:

• Ultra-low friction coefficient
• Extreme wear resistance
• Improved thermal flux handling

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6. Manufacturing Process

Step 1 – Powder Preparation

• TC4 powder + diamond powder
• High-energy ball milling for uniform mixing

Step 2 – Consolidation

• Spark plasma sintering (SPS)
• Controlled temperature, pressure, and dwell time

Step 3 – Surface Functionalization (Optional)

• Hot filament CVD diamond deposition
• Stress-controlled filament alignment

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7. Design Flexibility

8. Applications

 Aerospace

• Lightweight wear-resistant components
• Thermal-structural parts

Semiconductor Equipment

• Precision handling components
• Vacuum-compatible structures

 Tribology

• Bearings and sliding interfaces
• High-load wear systems

 Biomedical

• Biocompatible implants
• Surgical tools

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9. Competitive Advantages

• Integrated bulk + surface engineering
• Strong interfacial bonding via TiC
• Scalable SPS + CVD manufacturing
• Tunable thermal and mechanical properties

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10. Customization Options

DIASEMI provides:

• Diamond particle size & fraction tuning
• Custom geometry (plates, discs, complex shapes)
• Surface coating (thickness, roughness, grain size)
• Hybrid structures (Cu-enhanced densification)

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11. Ordering Information

Code	Description
DIA-TD-10	10% Diamond Composite
DIA-TD-20	20% Diamond Composite
DIA-TD-CVD	With CVD Diamond Coating
DIA-TD-CU	Cu-enhanced densification

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12. Quality & Testing

• SEM microstructure analysis
• Raman spectroscopy (diamond quality)
• Density & porosity measurement
• Hardness and mechanical testing
• Thermal expansion & conductivity characterization

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13. Disclaimer

Values shown are typical and may vary depending on processing conditions and customization. DIASEMI recommends application-specific validation.

Diamond Nanophotonic & Optomechanical Membrane

 

Diamond Nanophotonic & Optomechanical Membrane

Enabling Next-Generation Photonics, Quantum Sensing, and Light-Driven Mechanics

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Executive Summary

The rapid evolution of nanophotonics and optomechanics is redefining how light interacts with matter—not only as a carrier of information, but also as a mechanical actuator at the micro- and nanoscale. DIASEMI introduces a diamond-based nanophotonic membrane platform that enables simultaneous control of:

• Optical phase, polarization, and spin–orbital states
• Mechanical motion driven by radiation pressure and angular momentum
• Quantum and sensing functionalities enabled by diamond’s unique material properties

Leveraging ultra-thin CVD diamond membranes (1–10 μm) combined with advanced subwavelength structuring and femtosecond laser machining, DIASEMI delivers a scalable solution for integrated photonics, optomechanical systems, and quantum devices.

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Technology Overview

Light as a Mechanical and Optical Tool

Photons carry both linear momentum (radiation pressure) and angular momentum (spin and orbital), enabling:

• Optical trapping and manipulation (optical tweezers)
• Torque generation on birefringent microstructures
• Light-driven actuation and switching
• Nonlinear optical interactions (e.g., two-photon absorption)

DIASEMI’s platform harnesses these effects through engineered diamond nanostructures, enabling devices that both shape light and respond mechanically.

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Form-Birefringent Diamond Nanostructures

Subwavelength grating structures induce form birefringence (Δn = nₑ − nₒ), allowing precise control of:

• Polarization states
• Spin–orbital coupling (q-plates)
• Spectral filtering and dichroism
• Phase retardation across wide wavelength ranges

These structures enable advanced optical functionalities across UV → IR → THz regimes, leveraging diamond’s broadband transparency.

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Why Diamond? (DIASEMI Advantage)

DIASEMI’s platform is built on high-quality CVD diamond membranes with unmatched properties:

Property	Value / Benefit
Thermal conductivity	Up to 2000 W/m·K
Optical transparency	X-ray to far-IR
Refractive index	~2.4 (ideal for photonics)
Bandgap	5.45 eV (deep UV compatibility)
Mechanical strength	ieal for MEMS/NEMS
Quantum compatibility	NV⁻ centers for sensing

Key Advantage:
Diamond uniquely combines optical, mechanical, and quantum functionalities in a single material platform.

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DIASEMI Fabrication Platform

1. Lithography-Based Nanostructuring (High Precision)

• Electron-beam lithography (EBL)
• Reactive ion etching (RIE)
• Subwavelength gratings (Λ: 0.8–7 μm)
• Aspect ratios up to ~15

Applications:

• Infrared birefringent optics
• Polarization control elements
• Photonic crystal structures

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2. Femtosecond Laser Micro-Machining (High Flexibility)

• 230 fs pulse duration @ 1030 nm
• Sub-micron precision over cm-scale areas
• Graphitization-assisted cutting & ablation
• Direct structuring of 1 μm membranes

Capabilities:

• Suspended optomechanical structures
• Stress-relief patterning
• Rapid prototyping without masks

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Optomechanical Structures

DIASEMI enables fabrication of ultra-sensitive suspended diamond devices, including:

• Micro-bridges (≤10 μm width)
• Membrane-supported platforms
• Resonant mechanical elements

These structures exhibit:

• High sensitivity to optical forces
• Tunable mechanical resonance
• Strong coupling to light fields

Result: Ideal for precision sensing, actuation, and quantum optomechanics.

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Optical Performance

Infrared Birefringent Response

• Tunable dichroism (positive ↔ negative)
• Polarization-dependent absorption and transmission
• Quarter-wave phase control via structural design
• Broadband operation (2.5–15 μm demonstrated)

Subwavelength Effects

• Λ ≈ λ regime enables:
  • Enhanced light–matter interaction
  • Diffraction-controlled transmission
  • Field localization at diamond–air interfaces

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Key Innovations

DIASEMI’s platform introduces:

• Thin (<10 μm) free-standing diamond photonic membranes
• Hybrid fabrication (EBL + fs-laser)
• Integrated opto-mechanical functionality
• Spectral tunability via geometry-controlled birefringence
• Stress-engineered flatness for high-yield fabrication

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Applications

Photonics & Optics

• IR windows and filters
• Polarization converters (q-plates)
• Photonic crystal devices
• Beam shaping and phase control

Quantum Technologies

• NV-based sensing platforms
• Quantum photonics integration
• Spin–photon interfaces

Optomechanics

• Light-driven MEMS/NEMS
• Precision force and torque sensors
• Levitated particle systems

Thermal & Harsh Environments

• High-power laser systems
• Aerospace and defense optics
• Extreme environment sensing

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Manufacturing Challenges Solved by DIASEMI

Challenge	DIASEMI Solution
Membrane warping	Stress-relief laser patterning
Substrate non-flatness	Adaptive fabrication workflows
Fragility of thin diamond	Controlled thinning + support design
Large-area nanopatterning	fs-laser scalability
Multi-physics integration	Unified material platform

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Future Roadmap

DIASEMI is advancing toward:

• Wafer-scale diamond photonic platforms
• Integrated quantum–photonic–mechanical systems
• AI-designed nanophotonic structures
• Hybrid diamond–Si/SiC/AlN/GaN integration

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Conclusion

DIASEMI’s diamond nanophotonic membrane platform represents a paradigm shift in photonics and optomechanics, enabling:

• Light to control matter
• Structures to control light
• And diamond to unify both

This technology unlocks new possibilities in precision sensing, quantum systems, and high-performance photonic devices, positioning DIASEMI at the forefront of next-generation photonics innovation.

Standard Diasemi diamond and copper composite heatsink

Standard Diasemi diamond and copper composite heatsink

1. Copper Diamond Composite  Cu Coated

Dimensions Tolerances: 15x15x0.3 ±0.1mm 

Ra: 0.5um 

2. Copper Diamond Composite  Cu Coated

Dimensions Tolerances: 15x15x0.5 ±0.1mm 

Ra: 0.5um 

3. Copper Diamond Composite  Cu Coated

Dimensions Tolerances: 15x15x1.0 ±0.1mm 

Ra: 0.5um 

4. Copper Diamond Composite  Cu Coated

Dimensions Tolerances: 15x15x1.5 ±0.1mm 

Ra: 0.5um 

5. Copper Diamond Composite  Cu Coated

Dimensions Tolerances: 15x15x2.0 ±0.1mm 

Ra: 0.5um 

6. Copper Diamond Composite Cu Coated

Dimensions Tolerances: 20x20x0.3 ±0.1mm 

Ra: 0.5um 

7. Copper Diamond Composite  Cu Coated

Dimensions Tolerances: 20x20x0.5 ±0.1mm 

Ra: 0.5um 

8. Copper Diamond Composite  Cu Coated

Dimensions Tolerances: 20x20x1.0 ±0.1mm 

Ra: 0.5um 

9. Copper Diamond Composite  Cu Coated

Dimensions Tolerances: 20x20x1.5 ±0.1mm 

Ra: 0.5um 

10. Copper Diamond Composite  Cu Coated

Dimensions Tolerances: 20x20x2.0 ±0.1mm 

Ra: 0.5um 

DIASEMI Ultra-Thin AlN Insulated Diamond–Copper Heat Spreader

 

DIASEMI Ultra-Thin AlN Insulated Diamond–Copper Heat Spreader

DIASEMI presents an advanced diamond–copper composite heat spreader featuring an ultra-thin aluminum nitride (AlN) ceramic coating (1–2 μm) for high-performance thermal management with electrical insulation.

Unlike conventional thick ceramic layers, the sub-micron AlN coating is deposited via precision thin-film processes, dramatically reducing thermal resistance while maintaining excellent dielectric strength and interface reliability.

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Key Features

• Ultra-thin AlN insulation: 1–2 μm (minimized thermal barrier)
• Exceptional thermal conductivity: up to 600–900 W/m·K (composite core)
• High dielectric strength: suitable for power electronics isolation
• Low thermal resistance interface: optimized for high heat flux devices
• Robust adhesion: engineered interfacial layer for long-term stability
• CTE matching: tailored for GaN, SiC, and advanced semiconductor packages

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Performance Advantage

By reducing the ceramic coating thickness from conventional tens of microns to 1–2 μm, DIASEMI achieves:

• >30–50% reduction in interfacial thermal resistance
• Improved heat dissipation efficiency under >1 kW/cm² heat flux
• Enhanced reliability under thermal cycling

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Applications

• GaN / SiC power modules
• High-power laser diode packages
• RF and microwave systems
• AI and high-density computing hardware

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Positioning

The DIASEMI solution bridges the gap between high thermal conductivity materials and electrical insulation, enabling next-generation compact, high-power semiconductor systems where both heat removal and dielectric isolation are critical.

DIASEMI Ceramic Coating Insulated Diamond–Copper Heatsink

 

DIASEMI  Ceramic Coating Insulated Diamond–Copper Heatsink

www.diasemi.us

DIASEMI introduces an advanced insulated diamond–copper composite engineered for next-generation high-power electronic and photonic systems. By integrating a dense Al₂O₃ ceramic layer via aerosol deposition, the inherently conductive Cu/diamond composite is transformed into a high-performance, electrically insulating thermal management platform.

The Al₂O₃ coating preferentially anchors onto the ductile copper matrix, forming a continuous, conformal insulating layer while progressively extending across diamond surfaces from the Cu–diamond interface. This unique deposition mechanism enables full electrical isolation without compromising thermal pathways. A ~9 μm-thick ceramic layer delivers ultra-high electrical resistivity (~10¹² Ω·cm), increasing bulk resistance by more than 14 orders of magnitude.

Critically, the composite retains an ultra-high thermal conductivity of ~800 W/m·K—far exceeding conventional ceramic-based solutions. Compared with diamond–SiC composites, the DIASEMI insulated diamond–copper platform provides superior thermal conductivity, improved thermal spreading efficiency, and comparable thermal expansion matching.

This work establishes insulated Cu/diamond as a breakthrough material platform that bridges the gap between metals and ceramics, enabling high-voltage, high-heat-flux applications.

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Introduction (DIASEMI Technical Positioning)

Thermal Management Challenge in High-Power Systems

The continuous scaling of power density in semiconductor devices—such as IGBTs, RF amplifiers, and high-energy laser systems—has pushed thermal management materials beyond traditional limits. Materials must simultaneously deliver:

• Ultra-high thermal conductivity
• Electrical insulation
• Coefficient of thermal expansion (CTE) compatibility
• Mechanical reliability under thermal cycling

Material Landscape: Diamond-Based Composites

Two leading material systems have emerged:

1. Diamond–SiC (Ceramic Matrix Composite)

Diamond/SiC composites are widely adopted due to their intrinsic electrical insulation and good thermal stability. However:

• Thermal conductivity typically ranges 200–800 W/m·K
• Phonon scattering at diamond–SiC interfaces limits performance
• Limited tunability of properties due to ceramic processing constraints

2. Diamond–Copper (Metal Matrix Composite)

Cu/diamond composites offer:

• Exceptional thermal conductivity (>800 W/m·K)
• Excellent thermal spreading due to metallic matrix
• Tunable CTE via diamond loading and interface engineering

However, their electrical conductivity prohibits direct use in high-voltage environments, historically limiting their application scope.

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DIASEMI Breakthrough: Insulated Diamond–Copper Composite

DIASEMI overcomes this fundamental limitation by introducing a ceramic insulation layer (Al₂O₃) via aerosol deposition (AD):

• Room-temperature process → preserves interface integrity
• Dense, pinhole-free ceramic coating
• Conformal coverage across heterogeneous Cu–diamond surface
• No degradation of thermal pathways

Deposition Mechanism Insight

• Al₂O₃ preferentially deposits on the soft Cu matrix, smoothing surface roughness
• Growth initiates at Cu–diamond interfaces, ensuring strong anchoring
• Coating propagates across diamond surfaces, forming a continuous insulating layer
• Smaller diamond particles enhance coating uniformity due to higher interfacial area

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Performance Comparison: DIASEMI vs Diamond–SiC

Property	DIASEMI Insulated Cu/Diamond	Diamond/SiC Composite
Thermal Conductivity	500~850 W/m·K	200–800 W/m·K
Electrical Property	Insulating (Al₂O₃ layer)	Intrinsically insulating
Thermal Spreading	Excellent (metal matrix)	Moderate
CTE (ppm/K)	5–8 (tunable)	3–6
Processing Temperature	Room temperature (AD coating)	High-temperature sintering
Interface Control	Engineered carbide + coating	Limited
Power Device Suitability	Excellent (IGBT, RF, laser)	Good

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Key Advantages of DIASEMI Insulated Cu/Diamond

• 3–4× higher thermal conductivity vs Diamond/SiC
• Maintains electrical insulation without sacrificing heat dissipation
• Superior thermal spreading → reduced hot spots
• Scalable, low-temperature coating process
• High reliability under thermal cycling

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Application Positioning

The DIASEMI insulated diamond–copper platform is optimized for:

• High-voltage power modules (IGBT, SiC MOSFET)
• High-power laser diode packaging
• RF and microwave systems
• Advanced photonics and optical platforms
• Aerospace and defense thermal systems

DIASEMI DICU Diamond and copper composite heatsink

 

DIASEMI™ DICU Ultra Thermal™ Series

Diamond / Copper High Thermal Conductivity Composite

Engineered Heat Spreader Platform for Extreme Power Density

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1. Product Overview

DIASEMI™ D-Cu Ultra Thermal™ is a next-generation diamond-reinforced copper composite designed for ultra-high heat flux applications.

By integrating engineered carbide interlayers (TiC / WC / ZrC) with optimized diamond architecture, the material achieves exceptional thermal conductivity with tailored thermal expansion, enabling reliable operation in next-generation semiconductor and photonics systems.

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2. Key Features

• Ultra-high thermal conductivity: up to 850 W·m⁻¹·K⁻¹
• CTE matching to semiconductors: 6–8 ×10⁻⁶ K⁻¹
• Low interfacial thermal resistance via engineered carbide bonding
• High density (>99%) for maximum heat transport efficiency
• Excellent thermal stability under high power cycling
• Customizable geometry and thickness

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3. Typical Applications

Semiconductor & Electronics

• GaN / SiC RF power devices
• Laser diode heat spreaders
• High-performance CPUs / GPUs
• Power modules (IGBT, MOSFET)

Photonics

• High-power laser packaging
• Optical benches
• IR / EUV systems thermal platforms

Advanced Systems

• Aerospace electronics
• Fusion / high-energy systems
• Microwave and RF components

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4. Material Specifications

Property	Typical Value	Test Method
Thermal Conductivity	700 – 850 W·m⁻¹·K⁻¹	Laser Flash
Coefficient of Thermal Expansion (CTE)	6 – 8 ×10⁻⁶ K⁻¹	Dilatometry
Density	> 99% theoretical	Archimedes
Specific Heat	~385 J·kg⁻¹·K⁻¹	DSC
Electrical Resistivity	2–4 µΩ·cm	Four-point probe
Bending Strength	250–350 MPa	ASTM C1161
Operating Temperature	up to 500°C (air)	—

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5. Interface Engineering Options

(A) WC Interface (Standard Industrial Grade)

• Interlayer: 180–220 nm WC
• Thermal conductivity: 750–820 W·m⁻¹·K⁻¹
• Best for: scalable production, cost-performance balance

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(B) TiC Interface (High-End Performance Grade)

• Interlayer: 200–250 nm TiC
• Thermal conductivity: 800–850 W·m⁻¹·K⁻¹
• Best for: extreme heat flux, premium devices

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(C) ZrC Interface (High Reliability Grade)

• Interlayer: 150–250 nm ZrC
• Thermal conductivity: 600–750 W·m⁻¹·K⁻¹
• Best for: harsh environments, long lifetime systems

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6. Microstructure Design

Parameter	Specification
Diamond Type	Synthetic (HPHT / CVD compatible)
Particle Size	100 – 200 µm (optimized)
Volume Fraction	60 – 70%
Distribution	Uniform / bimodal optional
Interface Layer	Continuous carbide coating

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7. Available Formats

• Plates: up to 100 × 100 mm
• Thickness: 0.3 – 5 mm
• Custom shapes:
  • Laser cut
  • CNC machined
  • Metallized (Ni/Au optional)

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8. Surface & Finishing Options

• Polished (Ra < 50 nm available)
• Double-side lapping
• Metallization:
  • Ni / Au
  • Ti / Pt / Au
• Direct bonding ready surfaces

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9. Process Technology

DIASEMI utilizes a hybrid manufacturing platform:

• Diamond surface metallization
  • Magnetron sputtering
  • Salt bath / diffusion coating
• Composite formation:
  • Pressure melt infiltration (preferred)
  • Vacuum hot pressing
  • SPS (R&D / prototyping)

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10. Performance Benchmark

Material	Thermal Conductivity (W·m⁻¹·K⁻¹)	CTE (×10⁻⁶ K⁻¹)
Copper	~400	17
AlN	170–200	4.5
SiC	180–270	4
CVD Diamond	1200–2000	1–2
DIASEMI D-Cu Ultra Thermal™	700–850	6–8

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11. Design Advantages

✔ Compared to Copper

• 2× higher thermal conductivity
• 50% lower CTE

✔ Compared to Ceramics (AlN / SiC)

• 3–4× higher thermal conductivity
• Better heat spreading capability

✔ Compared to CVD Diamond

• Lower cost
• Easier machining
• Better CTE matching

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12. Reliability

• Thermal cycling stability: >1000 cycles (−40°C to 200°C)
• No delamination at interface
• مقاومة عالية للتعب الحراري (high thermal fatigue resistance)

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13. Design Guidelines

• Optimal interlayer thickness: ~200 nm
• Avoid excessive coating thickness (>300 nm)
• Maintain high diamond volume fraction (~65%)
• Ensure high Cu purity (≥99.99%)

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14. Ordering Information

Product Code Format:

DIASEMI-Dcu-[Interface]-[Size]-[Thickness]-[Finish]

Example:
DIASEMI-Dcu-WC-50x50-1.0mm-NiAu

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15. Customization Options

• Tailored CTE for specific chips (GaN / Si / SiC)
• Gradient interface design
• Microchannel integration for liquid cooling
• Large-area substrates

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16. Summary

DIASEMI™ D-Cu Ultra Thermal™ provides:

The optimal balance between ultra-high thermal conductivity, manufacturability, and system compatibility

It bridges the gap between:

• CVD diamond (performance)
• Copper (cost & processability)

www.diasemi.us