β-Ga2O3 film on a diamond substrate
β-Ga2O3
is a promising next generation of semiconductor materials of a large 4.8-eV bandgap, controllable n-type doping with Si/Sn/Ge, and relatively high
electron mobility of ~ 200 cm2/V s,however the material is with
relatively low thermal conductivity ,high thermal conductive diamond substrate
might be a perfect enabler for the combination to be a great candidate for next
success.
Direct
bonding of β-Ga2O3 film on a diamond substrate at 250ºC under atmospheric
conditions was recently developed. The β-Ga2O3 surface before bonding was
activated by oxygen plasma irradiation, while the diamond surface was cleaned
with H2SO4/H2O2 and NH3/H2O2 mixtures. The β-Ga2O3anddiamond surfaces adhered
to one another under atmospheric conditions. By annealing the contacted
specimen at 250ºC, atomic bonds were formed without voids, cracks, or severe
crystallinity damages. Direct bonding of
β-Ga2O3 and diamond might pave the a new way for a promising ultra-wide bandgap
power semiconductor materials
No comments:
Post a Comment