Silicon oxycarbide (SiOC)

Silicon oxycarbide (SiOC)

Silicon oxycarbide (SiOC) based materials are of interest due to their unique properties, including high-temperature resistance, mechanical strength, chemical durability and corrosion resistance. The versatility of the silicon oxycarbide chemistry allows the modification of properties for different fields.

Density :  1.5–1.95 g cm−3.

Hardness  9.5

Thermal conductivity 130-180W(mk)

Thermal expansion 3.5X10^-6

ASML RS NXE ZDRIVE INSERT PLATE 4022 482 5780

ASML RS NXE ZDRIVE INSERT PLATE 4022 482 5780

www.cerameric.com

ASML/CANON WAFER CHUCK TABLE BY SEMIXICON

 ASML WAFER CHUCK TABLE BY SEMIXICON

PN:

4022.630.98731

4022.474.25881

4022.630.09281

4022.455.4331

4022.460.2111

4022.435.05718

4022.480.0009

4022.486.1122

CANON STEPPER WAFER CHUCK8 -12 INCH

For CANON STEPPERS

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• FPA-1550Mk4W
• FPA-2000i1
• FPA-2500i2
• FPA-2500i3
• FPA-3000i4
• FPA-3000iW
• FPA-3000MR

• FPA-3000i5
• FPA-3000i5+
• FPA-3000i5++
• FPA-3000Ex3
• FPA-3000Ex4
• FPA-3000Ex5
• FPA-3000Ex6

BG4-6854-000V

DUPLICATION

MODIFICATION

RECONDITION

ALL IN 

www.semixicon.com

FKJS-510001-20

Disco

P/N  FKJS-510001-20

Wafer Chuck Spinner Table

Porous Ceramic Vacuum Chuck

 Porous Gang Ceramic Vacuum Chuck

www.cerameric.com

www.semixicon.com

APPLIED MATERIALS (AMAT); Part Number: 0200-09951; Description: PAD, WAFER LIFT

 APPLIED MATERIALS (AMAT); Part Number: 0200-09951; Description: PAD, WAFER LIFT

Varian/ Applied Materials VIISta PLAD vacuum wafer chuck High Dose Doping

 Varian/ Applied Materials VIISta PLAD vacuum wafer chuck High Dose Doping

This vacuum chuck has a network of small pressure actuated valves within the precision machined Graphite top plate.  These valves allow a vacuum source to draw down a wafer on the very flat graphite substrate. The weight of a single wafer is enough to push down the valve pins and allow vacuum to the chuck.  Also within the chuck surface there are three larger holes for the wafer lift assembly. This makes clearance for a transfer robot to get under the wafer.  That mechanism would be part of the under surface of the chuck.  The main chuck carrier is aluminum. The wafer contact area has been surface ground to a flatness of extreme precision.  This is part of the Applied Materials Ion Implant instrument.