CERAMERIC AlON Transparent Ceramics

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Clear. Strong. Built for Extreme Environments.

Aluminum Oxynitride (AlON) from CERAMERIC delivers a unique combination of optical clarity, structural strength, and environmental durability. It is engineered for applications where conventional glass or oxide ceramics cannot survive.

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Key Advantages

• Wide spectral transmission: 0.2–6.0 μm (UV–Mid IR)

• High strength & hardness for impact and abrasion resistance

• Lightweight ballistic capability

• Thermal-shock and chemical stability

• Excellent polishability for optical surfaces

AlON maintains performance under high stress, high temperature, and high-speed aerodynamic conditions.

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Applications

Defense

• Transparent armor

• Missile domes

• Seeker and sensor windows

Aerospace

• High-speed optical windows

• Environmental sensor housings

Industrial

• IR imaging components

• Scanner and inspection windows

• High-temperature viewing ports

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CERAMERIC Manufacturing Capabilities

• High-purity AlON powder engineering

• Reaction sintered and premium optical-grade processes

• Precision shaping: domes, plates, custom geometries

• Optical-grade finishing and coating options

Our dual-process approach allows us to offer both cost-effective structural grades and high-transparency optical grades.

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Why CERAMERIC

• Reliable scaling from prototypes to production

• Consistent microstructure and transmittance

• Engineering support for demanding environments

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Build your next-generation optical protection with CERAMERIC AlON.

Contact us for samples or technical support.

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Transparent β-Si₃N₄ Ceramics

Transparent β-Si₃N₄ Ceramics

The below articles is from 

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Over the past two decades, transparent ceramics have advanced rapidly, with materials such as sapphire, MgAl₂O₄ spinel, and AlON achieving broad adoption in optical windows, protection systems, and laser components. However, these conventional transparent oxides exhibit inherent limitations in mechanical strength, thermal-shock resistance, and high-temperature stability. As a result, they cannot fully satisfy the requirements of extreme-environment optical systems, hypersonic platforms, or next-generation transparent armor.

In this context, transparent β-Si₃N₄ (silicon nitride) has emerged as a promising frontier material. Si₃N₄ is a well-known structural ceramic with high strength, high fracture toughness, excellent thermal-shock resistance, oxidation resistance, and chemical stability. Conventional Si₃N₄ is dark and opaque, primarily due to glassy intergranular phases, residual porosity, refractive-index mismatch, and uneven grain size–induced scattering.

Achieving optical transparency requires extreme control of the ceramic microstructure: full densification, clean and refractive-index-matched grain boundaries, uniform grain size, and suppression of abnormal growth. Additionally, transparent ceramics strongly prefer the hexagonal β-Si₃N₄ phase, which provides superior stability and mechanical performance.

Key Technical Challenges

The fabrication of optically transparent Si₃N₄ is exceptionally difficult and is driven by three major challenges:

1. Powder Purity and Oxygen Removal

Si₃N₄ powders naturally form a SiO₂ surface layer that produces glassy grain-boundary phases during sintering, leading to strong scattering. Removing or minimizing this oxide layer requires chemical etching, reductive annealing, and high-purity powder synthesis.

2. Densification Without Oxide Additives

Conventional Si₃N₄ densification relies on oxide additives to form a liquid phase, but these additives degrade transparency. Therefore, transparent Si₃N₄ typically requires:

• HPHT (high-pressure, high-temperature) sintering,

• near-zero sintering additives,

• solid-state densification assisted by multi-GPa pressure,
  ensuring pore-free structure and clean grain boundaries.

3. Controlled α→β Phase Transformation

High transparency requires complete β-phase formation while avoiding abnormal grain growth and columnar grains, which increase scattering. This is achieved by:

• using small amounts of β-Si₃N₄ seed particles,

• tailoring phase-transformation kinetics,

• applying short high-temperature dwell times.

These combined constraints make transparent β-Si₃N₄ one of the most challenging transparent ceramic systems known today.

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Performance Advantages and Application Potential

Transparent β-Si₃N₄ offers a unique combination of structural and optical functionality. Compared with oxide-based transparent ceramics, it delivers:

• Higher mechanical strength and fracture toughness

• Superior thermal-shock resistance

• Excellent high-temperature mechanical retention

• Lower density relative to sapphire

These attributes enable applications that oxides cannot fully support.

Key Application Domains

1. Extreme-Environment Optical Windows
Suitable for hypersonic vehicle radomes, seeker domes, combustion-chamber windows, and reactor observation ports due to its high-temperature strength and oxidation resistance.

2. Transparent Armor and Protective Systems
Its high strength–to-weight ratio enables thickness reduction and weight savings in multilayer transparent armor stacks, partly replacing sapphire or spinel.

3. High-Power Laser Windows and Optics
Higher thermal conductivity and fracture resistance reduce thermal-lensing effects under high-energy beams.

Across all scenarios, transparent β-Si₃N₄ targets applications where simultaneous optical transmission, high strength, and high-temperature stability are mandatory — a performance space not fully covered by current oxide ceramics.

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Nano Polycrystalline Diamond --- SiC GaN semiconductor industry Diasemi

Nano Polycrystalline Diamond --- SiC GaN semiconductor industry Diasemi

With the rapid advancement of advanced manufacturing and new materials technologies, micro-/Nano Polycrystalline Diamond has become indispensable in precision polishing, ultra-precision machining, functional coatings, and high-end slurry formulations due to its extreme hardness, high specific surface area, and tunable surface chemistry. The accelerated expansion of third-generation semiconductors such as SiC and GaN is further driving the demand for high-purity, highly dispersible, and size-controlled micro-/materials.

Although detonation synthesis remains the most scalable and cost-effective route for producing micro-/Nano Polycrystalline Diamond, it faces persistent bottlenecks—including broad particle-size distributions, low graphite-to-diamond phase-transition efficiency, limited yield, and poor dispersion stability. These challenges represent both fundamental scientific issues and major engineering barriers to industrial adoption.

To address these limitations, Diasemi has developed a comprehensive technology framework for precision synthesis of detonation-derived micro-/nano-polycrystalline diamond:

• Heterogeneous nucleation control, enabling narrow particle-size distribution;

• Hollow-framework catalytic systems, significantly enhancing phase-transition efficiency and enabling high-yield carbon conversion to diamond;

• Next-generation detonation engineering platforms, overcoming conventional yield constraints and enabling a daily capacity of 600,000 carats.

In parallel, Diasemi established a dual stabilization strategy—“micro-scale screening + mesoscopic freezing”—and developed proprietary monodisperse, fully suspended micro-/nano-polycrystalline diamond polishing slurries capable of long-term high-solids stability. These products have been successfully deployed in a top tier 6-8 inch SiCwafer manufacturing fabs, delivering reliable solutions for achieving angstrom-level surface flatness in ultra-precision SiC wafer finishing.

Diasemi’s innovations provide a robust materials foundation for next-generation semiconductor manufacturing and the broader high-end precision-processing industry.

www.diasemi.us

Sarai (サライ) Song by Shinji Tanimura

 Sarai (サライ)

Song by Shinji Tanimura

遠い夢すてきれずに 故郷(ふるさと)をすてた

穏やかな春の陽射しが ゆれる小さな駅舎(えき)
別離(わかれ)より悲しみより 憧憬(あこがれ)はつよく
淋しさと背中合わせの ひとりきりの旅立ち

動き始めた 汽車の窓辺を
流れてゆく景色だけを じっと見ていた
サクラ吹雪の サライの空は
哀しい程青く澄んで 胸が震えた

恋をして恋に破れ 眠れずに過ごす
アパートの窓ガラス越し 見てた夜空の星
この街で夢追うなら もう少し強く
ならなけりゃ時の流れに 負けてしまいそうで

動き始めた 朝の街角
人の群れに埋もれながら 空を見上げた
サクラ吹雪の サライの空へ
流れてゆく白い雲に 胸が震えた

離れれば離れる程 なおさらにつのる
この想い忘れられずに ひらく古いアルバム
若い日の父と母に 包まれて過ぎた
やわらかな日々の暮らしを なぞりながら生きる
まぶたとじれば 浮かぶ景色が
迷いながらいつか帰る 愛の故郷(ふるさと)

サクラ吹雪の サライの空へ
いつか帰るその時まで 夢はすてない

まぶたとじれば 浮かぶ景色が
迷いながらいつか帰る 愛の故郷(ふるさと)
サクラ吹雪の サライの空へ
いつか帰る いつか帰る きっと帰るから

 

Y₂O₃ Coatings in Semiconductor Etching Equipment

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Yttrium oxide (Y₂O₃) coatings are widely applied to critical components in plasma etching chambers due to their outstanding resistance to plasma erosion, low particle generation, and ability to maintain process stability.

Key Benefits

1. Plasma Erosion Resistance

   • In fluorine-based plasmas, Y₂O₃ forms stable compounds such as YF₃ and YOF.

   • These act as protective layers, resulting in extremely low etch rates (~11.5 nm/min).

   • Component lifetime is significantly extended, reducing replacement frequency.

2. Contamination Reduction

   • High-purity Y₂O₃ is chemically stable and generates minimal particles.

   • This reduces wafer defects and improves product yield.

3. Process Stability

   • Prevents chamber wall erosion and composition shifts, minimizing process drift.

   • Ensures high repeatability and consistency, boosting production efficiency.

4. Extended Maintenance Cycles

   • Protects aluminum alloy substrates and enhances durability.

   • Extends overhaul intervals from ~15 days to 6 months or more.

Why Y₂O₃ Excels

• Chemical Stability: Reaction byproducts (YF₃/YOF) are inert and protective.

• Low Etch Rate: Dense coatings exhibit slow degradation in fluorocarbon plasmas.

• Dense Microstructure: Low porosity prevents plasma penetration.

Fabrication Process

• Surface Preparation: Substrates are grit-blasted for strong adhesion.

• Powder Engineering: Spherical, spray-granulated Y₂O₃ powders enable uniform melting.

• Plasma Spraying: APS or SPS techniques deposit molten particles under tightly controlled conditions.

• Optimized Coatings: High density, low porosity, and strong adhesion are achieved.

Future Directions

Research is aimed at higher-density, higher-purity coatings, improved multi-gas plasma resistance, modified Y₂O₃ systems, and advanced spraying technologies for greater reliability in next-generation semiconductor manufacturing.

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BDD

 

Aspect	Silicon-based BDD electrode	Nickel-based BDD electrode	Titanium-based BDD electrode
Substrate/interlayer	Heavily doped Si wafers, often with buffer/carbonized layer	Ni foils, meshes, or coatings	Ti plates/foils, often forming TiC/TiN interface
Adhesion of diamond film	Moderate; risk of delamination due to stress (Si/diamond mismatch)	Good; Ni ductility buffers stress, but Ni–C phases may weaken long-term adhesion	Excellent; Ti forms stable TiC/TiN interlayer ensuring strong bonding
Thermal expansion mismatch with diamond	High (leads to residual stress & cracks)	Lower mismatch than Si	Very low mismatch; best stress relief
Electrochemical window (vs. Ag/AgCl)	Wide (up to ~3.5 V)	Wide, but slightly narrower due to Ni interactions	Wide (similar to Si-BDD, ~3.5 V)
Corrosion/chemical stability	Si substrate prone to oxidation/corrosion under long-term anodic polarization	Ni corrodes in chloride-containing wastewater; Ni²⁺ release is problematic	Ti highly corrosion-resistant; TiC/TiN barrier protects substrate
Service lifetime in water treatment	Shorter (substrate degradation limits use)	Moderate (substrate corrosion limits durability)	Longest (excellent lifetime, often >10,000 h reported)
Pollutant degradation efficiency	High (due to strong •OH radical generation)	High, but can drop with Ni dissolution	High, very stable across repeated cycles
Cost & scalability	Lower cost (Si wafers), easy to microfabricate, but limited electrode area	Moderate cost, can be made in larger area (foils/meshes)	Higher cost, but robust and widely adopted for industrial water treatment
Typical applications in water treatment	Lab-scale reactors, sensors, fundamental studies of EAOP	Pilot-scale reactors, electro-Fenton processes, H₂O₂ electrogeneration	Full-scale industrial wastewater treatment, electrochemical oxidation of persistent organic pollutants (POPs)

www.diasemi.us

Cerameric for ceramic components

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 Equip. Maker Equip. Name OEM P/N DESCRIPTION

AMAT 0020-01640 SHIELD,INSULATOR

AMAT ENDURA 5500 0020-20114 ISOLATOR DC BIOS

AMAT 0020-20123

AMAT ENDURA 5500 0020-20126 STAND OFF CERAMIC DC BIOS

AMAT 0020-23093 WASHER INSULATOR ENDURA PVD LIFTER LOT OF 3

AMAT 0020-29164 INSULATOR BOTTOM ON CAPSULE

AMAT 0022-48198 BUSH, CERAMIC AC PIN

AMAT 0022-63125 CERAMIC BALL, AL2O3, 8MM DIA

AMAT DPS METAL 0200-00247 RING CAPTURE,195MM SNNF CERAMIC,DPS

AMAT 0200-00250 RING

AMAT P-5000 DXZ 0200-00296 SLEEVE JUNCTION SIN, DXZ

AMAT 0200-00318 GUIDE LIFT PIN SST HEATER 300MM TXZ

AMAT CENTURA 5200 0200-00353 SPACER PIN WxZ+HEATER

AMAT ENDURA 5500 0200-00354 Ring, Purge WxZ + FC Notch

AMAT ULTIMA 0200-00576 PIN, WEIGHT 300MM HDP-CVD

AMAT 0200-00635 NOZZLE, ALL CERAMIC 2.28L, 300MM HDP CVD

AMAT 0200-00911 LABYRINTH FEEDTHRU COIL SUPORT ELECTRA

AMAT 0200-01006 Dome for plus & TE

AMAT 0200-01009 top nozzle

AMAT 0200-01196 LIFT PIN FAST LIFT, ALUMINA NON-CONDUCTIVE,100DIA

AMAT 0200-01197

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LIFT PIN, ADJUST FAST LIFT, ALUMINA NON- CONDUCTIVE,100DIA

AMAT 0200-01368 INJICTOR CERAMIC CAS eMAX SAMSUNG

AMAT 0200-01798 PIN LIFT,TXZ HEATER SINGLE TAPER,CERAMIC

AMAT 0200-01844 INJECTOR,GAS 12 HOLES, .020 DIA, 1.02

AMAT 0200-01845 INJECTOR, GAS, 12 HOLES, .020 DIA, 1.02

AMAT 0200-01904 PIN PEDESTAL ALIGNMENT CERAMIC 300MM PCII

AMAT 0200-02113 BUSHING,UP,SHIELD,INS,300MM SIP ENCORE TA(N)

AMAT E-MAX 0200-02116 INJECTION,GAS HOLES, .020 DIA , 1.02 LG 63RA, INNER

AMAT E-MAX 0200-02117 INJICTOR GAS SEAL,BLANK-OFF,CERAMIC eMAX

AMAT 0200-02121 INSULATOR FEEDTHRU,300MM SIP ENCORE TA(N)

AMAT 0200-02139 PIN ,COVER CAPTIVE SCREW,300MM SIP ENCORE TA(N)

AMAT 0200-02145 CAP,COIL SUPPORT ,300MM SIP ENCORE TA(N)

AMAT 0200-02781 PIN, LIFT, PRODUCERE

AMAT 0200-06702

AMAT P-5000 DXZ 0200-09035 PIN, WAFER LIFT

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AMAT 0200-09046-2-CP01 ARM PAD

AMAT 0200-09046-3-CP01 ARM PIN

AMAT 0200-09046-CP01 ARM SUSCEPTOR

AMAT DSM 0200-09071 PIN WAFER LIFT 200MM

AMAT P-5000 DXZ 0200-09147 PIN WAFER LIFT 150 WB

AMAT 0200-09240--2-CP01 ARM PAD

AMAT 0200-09240-CP01 SUPPORT ATM SUSCEPTOR, 200MM

AMAT 0200-09384 PIN WAFER LIFT UNIVERSAL CHAMBER, 150 MM

AMAT 0200-09414 COLLAR .271 SUS BWCVD

AMAT 0200-09415 BUSHING .271 SUS BWCVD

AMAT 0200-09452 ARM, T2WELDED SUSCEPTOR

AMAT 0200-09575 PIN, WAFER LIFT, REV1 CERAMIC HOOP, 200MM

AMAT 0200-09614 PIN, LIFT WAFER 200MM BWCVD

AMAT CENTURA 5200 0200-09716 PIN LIFT, HEATER WxZ

AMAT P5000 METAL 0200-09735 COVER,CLAMPING RING, 150MM

AMAT 0200-09757 RING

AMAT P5000 METAL 0200-09759 SHIELD,150MM,PEDESTAL,AL,FINGER

AMAT 0200-09886 FINGER "6" MCVD

AMAT P5000 0200-09933 PIN, WAFER LIFT, HEATER

AMAT 0200-09951 PAD WAFER LIFT RING WXZ

AMAT 0200-09974 DXZ TEOS PUMPING RING

AMAT METAL ETCH 5000 0200-10027 RING, INNER, 1.50", SGD

AMAT 0200-10117 ARM

AMAT 0200-10143 Insert, Ring Ceramic, DXZ Chamber

AMAT 0200-10144 Teos isolator

AMAT 0200-10157 LINER, JUNCTION

AMAT CENTURA 5200 DXZ

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SION

0200-10158 OBS SLEEVE, JUNCTION SIN, DXZ

AMAT 0200-10160 LINER CERAMIC

AMAT CENTURA 5200 DXZ

SION

0200-10163 ISOLATOR, Sin ENHANCED, PUMPING LID, DXZ

AMAT 0200-10164 SIN PUMPING INSERT

AMAT 0200-10169 EDGE RING

AMAT 0200-10192 Ring focus ESC 8'' AMAT 0200-10204 PIN, WAFER LIFT, UNIV CH, METAL HOOP, 150 mm, P-CHUCK

AMAT 0200-10284 LIFT PIN

AMAT 0200-10286 LIFT RING

AMAT 0200-10676 SUPPORT SUSCEPTOR 150MM TO/SO/N

AMAT 0200-17666 WAFER NAILHEAD LIFT PIN, 300MM CATHODE DS

AMAT 0200-17725 CATHODE LINER SCREW COVER SAMURAI

AMAT DSM 0200-18053

AMAT ULTIMA 0200-18081 COVER LOW PROFILE HDP-CVD, ULTIMA

AMAT ULTIMA 0200-18086 NOZZLE ALL CERAMIC .85L HDP-CVD, ULTIMA

AMAT 0200-18090 cathode insulator

AMAT ULTIMA 0200-18093 NOZZLE ALL CERAMIC 2.55L, 1.5% HDP-CVD, ULTIMA

AMAT HDP 0200-18100 LIFT PIN CERAMIC 300MM, HDPCVD

AMAT ULTIMA 0200-18109 COLLAR 200mm SNNF SML FLT ULTIMA HDPCVD

AMAT 0200-18701 SHADOW RING INSERT, DIA 297 MM, 210 GRAM - DS

AMAT 0200-19002 SHADOW RING HEAT SHIELD. 2 - PCE RING - DS

AMAT 0200-19003 Shadow Ring Carrier, 300 mm DS

AMAT 0200-19038 SHADOW RING INSERT, DIA 295 MM, 210 GRAM - DS

AMAT VECTOR-IMP 0200-20215 HOUSING DOUBLE RF CONNECTORS,VECTRA-IMP

AMAT E-5500 VHP-TXZ 0200-20216 PIN COVER RF SCREW,VECTRA-IMP

AMAT E-5500 VHP-TXZ 0200-20315 REST BUTTON B101 VECTRA IMP

AMAT IMP 0200-20439 INSULATOR RIGID COIL SUPPORT, ELECTRA-IMP

AMAT IMP 0200-20440 REST BUTTON 300MM VECTRA IMP

AMAT 0200-20441 SUCEPTOR CENTER, VENTED,PEDESTAL,B101 300MM

AMAT 0200-20492 INSULATOR RECEPTACLE RIGID SUPPORT VECTRA-IMP,ICE

AMAT 0200-22972 COVER RING (0.2mmEE)

AMAT 0200-22973 Cover Ring (0.1mmEE)

AMAT 0200-23049 Cover Ring (0.5MM EE), 150MM Wafer, 57.5MM Flat

AMAT 0200-23094 FINGER LH 34MM HEIGHT

AMAT 0200-23095 FINGER LH 26MM HEIGHT

AMAT 0200-23096 FINGER RH 34MM HEIGHT

AMAT 0200-23097 FINGER RH, 26MM HEIGHT

AMAT 0200-23098 FINGER CENTER 34MM HEIGHT

AMAT 0200-23099 FINGER CENTER 34MM HEIGHT

AMAT 0200-23164 Shadow Ring Carrier, 200 mm DS

AMAT 0200-23441 SHADOW RING INSERT, DIA 197 MM

AMAT 0200-23655 RING, DEPOSITION, PVD W, CLEANCOAT ALUMINA 300 MM

AMAT 0200-23665 SHADOW RING HEAT SHIELD. 2 - PCE RING - DS

AMAT 0200-23666 FINGER SLIDING AL203

AMAT 0200-23849 SHADOW RING, 2.50 MM EDGE, NOTCH TSV, 300 MM

AMAT 0200-23850 SHADOW RING, 3.00 MM EDGE, NOTCH TSV, 300 MM

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AMAT 0200-24903 ESC INSULATOR, 300MM CATHODE DS

AMAT 0200-24917 LIFT PIN GUIDE, ESC SAMURAI

AMAT 0200-25446 BUSH, CERAMIC DC PIN

AMAT 0200-25488 BUSH, CERAMIC DC PIN

AMAT 0200-26129 ESC INSULATOR, 300MM CATHODE DS

AMAT 0200-27494 ALN DISC, 300MM NOTCHED

AMAT DPS METAL 0200-35290 HOUSING, GAS FEED NOZZLE DPS MEC CHAMBER

AMAT DPS METAL 0200-35291 PLUG, INNER, GAS FEED ASSY, DPS A1

AMAT DPS POLY 0200-35295 HOUSING, GAS FEED DPS POLY

AMAT DPS POLY 0200-35296 PLUG,INNER,GAS FEED ASSY,DPS PC

AMAT DPS METAL 0200-35323 RING,CAPTURE 195MM SEMI NOTCH NO FLAT CERAMIC DPS

CHAMBR

AMAT 0200-35702 CXZ EDGE RING

AMAT DSM 0200-36373 LIFT PIN .149 DIA TRIANGULAR

AMAT 0200-36415 C-SHAPE RING

AMAT 0200-36416 BOTTOM RING

AMAT 0200-36418 COVER PUMPING RING

AMAT 0200-36428 TUBE CERAMIC GAS FEED,MICROWAVE CLEAN

AMAT 0200-36630 PLATE, COVER, 8'' HEATER, DxZ ALUMINUM NITRIDE

AMAT 0200-36631 PLATE, COVER, 8'' HEATER, DxZ ALUMINUM NITRIDE

AMAT 0200-36649 LIFT RING

AMAT 0200-36666 isolator ceramic

AMAT OXIDE ETCH 5000 0200-36699 LIFT PIN FAST LIFT, ALUMINA NON-CONDUCTIVE

AMAT OXIDE ETCH 5000 0200-36700 LIFT PIN, ADJUST FAST LIFT, ALUMINA NON-CONDUCTIVE

AMAT 0200-39140 RING,FOCUS, 195MM SNNF 1", 60DEG, DPS

AMAT 0200-39324 CHM INSERT

AMAT 0200-39361 PRODUCER PUMPING RING

AMAT HDP 0200-40156 LIFT PIN, CERAMIC, LONG

AMAT 0200-71871 ROLLER LIFT PIN 15K/25K

AMAT 0200-71872 PIN, ROLLER BUSHING 15K/25K

AMAT 0200-71873 PIN END GROOVED ROLLER BUSHING 15K/25K

AMAT 0200-71880 BUSHING ROLLER, LIFT PIN15K/25K

AMAT 0200-71894 ROLLER LIFT PIN 15KP & 40K

AMAT 0200-76048 CERAMIC WASHER FINGER INSULATOR 101 HOOP

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